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EMF20N02VAT Datasheet(PDF) 4 Page - Excelliance MOS Corp. |
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EMF20N02VAT Datasheet(HTML) 4 Page - Excelliance MOS Corp. |
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4 / 5 page ![]() 2015/8/31 p.4 EMF20N02VAT On‐Resistance Variation with Tem perature T ‐ Junction Tem perature ( °C ) 0.4 ‐50 0.7 1.0 0 J ‐25 25 D I = 6A V = 4.5V 1.3 1.6 1.9 GS 125 50 75 100 150 On‐Resistance Variation with Gate‐Source Voltage T = 125°C V ‐ Gate‐Source Voltage( V ) 0 1 0.01 0.03 0.02 GS 23 T = 25°C A A 0.07 0.05 0.04 0.06 0.08 45 I = 3 A D TYPICAL CHARACTERISTICS 0 5 10 15 20 25 3 2.5 2 1.5 1 0.5 VGS, Gate‐Source Voltage( V ) VDS= 5V TA= -55°C 125°C 25°C Transfer Characteristics 10 1 0.01 0.001 0.0001 00.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage( V ) Body Diode Forward Voltage Variation with Source Current and Temperature VGS= 0V TJ= 125°C 25°C -55°C 0.1 100 25 20 15 10 5 0 0 0.4 1.2 1.6 2 VGS= 4.5V 3.0V 2.5V VDS, Drain‐Source Voltage( V ) On‐Region Characteristics 0.8 1.8V 2.5 2.0 1.0 0.5 0 6 12 18 24 VGS= 1.8V 3.0V 4.5V ID, Drain Current(A) On‐Resistance Variation with Drain Current and Gate Voltage 1.5 2.5V |
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