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EMF30N02A Datasheet(PDF) 4 Page - Excelliance MOS Corp. |
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EMF30N02A Datasheet(HTML) 4 Page - Excelliance MOS Corp. |
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4 / 6 page ![]() 2012/12/5 p.4 EMF30N02A TYPICAL CHARACTERISTICS 0.8 1.2 1 1.5 1.4 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature(° C) VGS= 4.5V On‐Resistance Variation with Temperature 0.9 1.1 1.3 ID= 5A 10 1 0.01 0.001 0.0001 00.2 0.4 0.6 0.8 1 1.2 VGS= 0V TJ= 125° C 25°C -55° C 0.1 100 Body Diode Forward Voltage Variation with Source Current and Temperature VSD, Body Diode Forward Voltage( V ) 0 2 8 12 16 20 3 2.5 2 1.5 1 0.5 VGS, Gate to Source Voltage( V ) VDS= 5V Transfer Characteristics TA= -55° C 25° C 125° C 40 32 24 16 8 0 0 0.5 1.5 23 VGS = 10V 7.0V 4.5V 3.0V 2.5V VDS, Drain‐Source Voltage( V ) On‐Region Characteristics 1 2.5 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 816 24 32 40 VGS = 2.5V 3.0V 4.5V 7.0V 10V ID, Drain Current( A ) On‐Resistance Variation with Drain Current and Gate Voltage 0.10 0.08 0.04 0.06 0.02 0 02 3 45 VGS, Gate‐Source Voltage( V ) On‐Resistance Variation with Gate‐Source Voltage ID=2.5A TA= 125°C TA= 25°C |
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