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EMF44P02P Datasheet(PDF) 1 Page - Excelliance MOS Corp. |
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EMF44P02P Datasheet(HTML) 1 Page - Excelliance MOS Corp. |
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1 / 5 page ![]() 2013/11/13 p.1 EMF44P02P G S D P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐20V RDSON (MAX.) 44mΩ ID ‐5.5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS ±12 V Continuous Drain Current TA = 25 °C ID ‐5.5 A TA = 70 °C ‐4.2 Pulsed Drain Current 1 IDM ‐22 Power Dissipation TA = 25 °C PD 1.47 W TA = 70 °C 0.94 Operating Junction & Storage Temperature Range Tj, Tstg ‐55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction‐to‐Case RJC 18 °C / W Junction‐to‐Ambient 3 RJA 85 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% 385°C / W when mounted on a 1 in2 pad of 2 oz copper. |
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