SM6042CSU4 datasheet(4/16 Pages) SINOPWER

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SM6042CSU4

Rev. A.2 - November, 2014

Electrical Characteristics (Cont.) (T

A = 25°C unless otherwise noted)

P Channel

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

DSS

Drain-Source Breakdown Voltage

GS=0V, IDS=-250μA

-60

DS=-48V, VGS=0V

-1

DSS

Zero Gate Voltage Drain Current

J=85°C

-30

µA

GS(th)

Gate Threshold Voltage

VDS=VGS , IDS=-250µA

-1

-2

-3

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±10

µA

VGS=-10V, IDS=-7.5A

RDS(ON)

Drain-Source On-state Resistance

VGS=-4.5V, IDS=-6.5A

130

Ω

Diode Characteristics

VSD

Diode Forward Voltage

ISD=-1A, VGS=0V

-0.7

-1

Reverse Recovery Time

Reverse Recovery Charge

IDS=-7.5A,

dlSD/dt=100A/

µs

Dynamic Characteristics

Gate Resistance

GS=0V,VDS=0V,F=1MHz

Ω

Ciss

Input Capacitance

530

690

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=-30V,

Frequency=1.0MHz

td(ON)

Turn-on Delay Time

Turn-on Rise Time

4.5

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

DD=-30V, RL=30Ω,

IDS=-1A, VGEN=-10V,

RG=6

Ω

Gate Charge Characteristics

Total Gate Charge

VDS=-30V, VGS=-4.5V,

IDS=-7.5A

Total Gate Charge

Qgs

Gate-Source Charge

1.2

Qgd

Gate-Drain Charge

3.6

Qgth

Threshold Gate Charge

VDS=-30V, VGS=-10V,

IDS=-7.5A

Note e：Guaranteed by design, not subject to production testing.

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