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SI7119DN Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

Part # SI7119DN
Description  P-Channel MOSFET
PDF  6 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI7119DN Datasheet(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

  SI7119DN Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd SI7119DN Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd SI7119DN Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd SI7119DN Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd SI7119DN Datasheet HTML 5Page - Guangdong Kexin Industrial Co.,Ltd SI7119DN Datasheet HTML 6Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
4
MOSFET
.
P-Channel MOSFET
SI7119DN (KI7119DN)
■
Typical Characterisitics
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
VSD - Source-to-Drain Voltage (V)
0
0.3
0.6
0.9
1.2
1.5
0.01
10
100
1
T J
= 150 °C
T J
= 25 °C
- 0.4
- 0.2
0.0
0.2
0.4
0.6
0.8
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
TJ - Temperature (°C)
ID = 5 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
1
2
3
4
5
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
TA = 25 °C
TA = 125 °C
0
60
100
20
40
Time (s)
80
10
0.01
1
1
.
0
1
0
0
.
0
Safe Operating Area, Junction-to-Ambient
10
0.01
0.1
1
0.1
1
10
100
100
0.001
1000
Limited by RDS(on)
T = 25 °C
Single Pulse
1 s
10 s
DC
10 ms
100 ms
1 ms
A
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS (on)is specified
>
*
Current Derating*
0
1
2
3
4
5
0
25
50
75
100
125
150
TC - Case Temperature (°C)



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