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MBR10200 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBR10200 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  - 88 - MBR1035 THRU MBR10200 10.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 200 Volts Current 10.0 Amperes Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260 oC/10 seconds,0.25”(6.35mm)from case Mechanical Data Cases: JEDEC TO-220A molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams TO-220A Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol MBR 1035 MBR 1045 MBR 1050 MBR 1060 MBR 1090 MBR 10100 MBR 10200 Units Maximum Recurrent Peak Reverse Voltage VRRM 35 45 50 60 90 100 200 V Maximum RMS Voltage VRMS 24 31 35 42 63 70 140 V Maximum DC Blocking Voltage VDC 35 45 50 60 90 100 200 V Maximum Average Forward Rectified Current See Fig. 1 I(AV) 10 A Peak Repetitive Forward Current (Square Wave, 20KHz) at Tc=135 oC IFRM 20.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 150 A Peak Repetitive Reverse Surge Current (Note 1) IRRM 1.0 0.5 A Voltage Rate of Change (Rated VR) dV/dt 10,000 V/uS Maximum Instantaneous Forward Voltage at (Note 2) IF=10A, Tc=25 OC IF=10A, Tc=125 OC IF=20A, Tc=25 OC IF=20A, Tc=125 OC VF 0.70 0.57 0.84 0.72 0.80 0.70 0.95 0.85 0.85 0.71 - - 1.05 - - V Maximum Instantaneous Reverse Current @ Tc =25 ℃at Rated DC Blocking Voltage (Note 2) @ Tc=125 ℃ IR 0.1 15.0 0.1 6.0 0.009 10 mA mA Typical Junction Capacitance (Note 3) Cj 350 280 200 pF M aximum Thermal Resistance, Junction to Case R θJC 3.5 2.0 ℃/W Operating Junction Temperature Range TJ -65 to +150 ℃ Storage Temperature Range TSTG -65 to +175 ℃ Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate. .412(10.5) MAX .185(4.70) .175(4.44) .055(1.40) .045(1.14) .27(6.86) .23(5.84) .11(2.79) .10(2.54) .025(0.64) .014(0.35) .154(3.91) .148(3.74) DIA PIN1 2 .113(2.87) .103(2.62) .16(4.06) .14(3.56) .037(0.94) .027(0.68) .205(5.20) .195(4.95) .594(15.1) .587(14.9) .56(14.22) .53(13.46) |
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Similar Description - MBR10200 |
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