IRFP150N

HEXFET Power MOSFET

www.artschip.com

2

Electrical Characteristics

Parameter

Min.

Typ.

Max.

Units

Conditions

Drain-to-Source Breakdown

100

-

-

V

Breakdown Voltage Temp. Coefficient

-

0.11

-

V/℃

Static Drain-to-Source On-Resistance

-

-

0.036

W

Forward Transconductance

2.0

-

4.0

V

-

-

25

Drain-to-Source Leakage Current

-

-

250

µA

Gate-to-Source Forward Leakage

-

-

100

Gate-to-Source Reverse Leakage

-

-

-100

nA

Total Gate Charge

-

-

110

Gate-to-Source Charge

-

-

15

Gate-to-Drain (“Miller”) Charge

-

-

58

nC

Turn-On Delay Time

-

11

-

Rise Time

-

56

-

Turn-Off Delay Time

-

45

-

Fall Time

-

40

-

ns

Internal Drain Inductance

-

5.0

-

Internal Source Inductance

-

13

-

nH

Between lead,

6mm (0.25in.)

From package

And center of die

contact

Ciss

Input Capacitance

-

1900

-

Coss

Output Capacitance

-

450

-

Crss

Reverse Transfer Capacitance

-

230

-

pF

f=1.0MHz, See Fig.5⑤

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Conditions

Is

Continuous Source Current

-

-

42

Pulsed Source Current (Body Diode) ①⑤

-

-

140

A

MOSFET

symbol

showing

the

integral reverse p-n

junction diode.

Diode Forward Voltage

-

-

1.3

V

Reverse Recovery Time

-

180

270

ns

Qrr

Reverse Recovery Charge

-

1.2

1.8

µC

di/dt=100A/µs④⑤

Forward Turn-On Time

Notes:

①

Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)

②

③

④

Pulse width ≤300µs; duty cycle≤2%.

⑤

Uses IRF1310N data and test conditions