IRLZ44/40

N-CHANNEL

LOGIC LEVEL MOSFET

www.artschip.com

2

ELECTRICAL CHARACTERISTICS

Symbol

Characteristic

Min

Typ

Max

Units

Test Conditions

Drain-Source Breakdown Voltage

IRLZ44

IRLZ40

60

50

-

-

-

-

V

V

Gate Threshold Voltage

1.0

-

2.0

V

Gate-Source Leakage Forward

-

-

100

nA

Gate-Source Leakage Reverse

-

-

-100

nA

-

-

250

µA

Zero Gate Voltage Drain Current

-

-

1000

µA

Static Drain-Source On-Resistance(2)

-

-

0.04

Ω

gfs

Forward Transconductance(2)

15.0

-

-

Ciss

Input Capacitance

-

2400

-

pF

Coss

Output Capacitance

-

795

-

pF

Crss

Revers Transfer Capacitance

-

390

-

pF

td(on)

Turn-On Delay Time

-

25

40

ns

tr

Rise Time

-

65

85

ns

td(off)

Turn-Off Delay Time

-

350

400

ns

tf

Fall Time

-

180

200

ns

(MOSFET switching times are essentially

independent of operating temperature)

Qg

Total Gate Charge

(Gate-Source Plus Gate-Drain)

-

-

80

nC

Qgs

Gate-Source Charge

-

20

-

nC

Qgd

Gate-Drain Charge

-

30

-

nC

charge is essentially independent of

operating temperature)

THERMAL RESISTANCE

Symbol

Characteristics

All

Units

Remark

Junction-to-Case

MAX

1.0

K/W

Case-to-Sink

TYP

0.5

K/W

Mounting surface flat,

smooth,and greased

Junction-to-Ambient

MAX

62.5

K/W

Free Air Operation

Notes: (1) Tj=25℃ to 175℃

(2) Pulse test: Pulse width≤300µs, Duty Cycle≤2%

(3).Repetitive rating:Pulse width limited by max. Junction temperature