MMBT8050 datasheet(2/4 Pages) ARTSCHIP

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MMBT8050

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ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

1000

Collector Dissipation(TA=25°C)

SOT-23

TO-92

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage

BVCEO

IC = 1mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

IE = 100μA, IC =0

Collector Cut-Off Current

ICBO

VCB = 35V,IE = 0

Emitter Cut-Off Current

IEBO

VEB = 5V, IC = 0

100

DC Current Gain(note)

hFE1

VCE = 1V, IC = 1mA

100

400

hFE2

VCE = 1V, IC = 150 mA

120

hFE3

VCE = 1V, IC = 500mA

Collector-Emitter Saturation Voltage

VCE(SAT) IC = 800mA, IB = 80mA

0.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC = 800mA, IB = 80mA

1.2

Base-Emitter Saturation Voltage

VBE(SAT)

VCE = 1V, IC = 10mA

1.0

Current Gain Bandwidth Product

VCE = 6V, IC = 20mA

100

Output Capacitance

Cob

VCB = 10V, IE = 0, f = 1MHz

9.0

CLASSIFICATION OF hFE2

RANK

RANGE

120-200

160-300

280-400

100

MHz

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