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BTM521 DATASHEET

6. ELECTRICAL CHARACTERISTIC

6.1

Absolute Maximum Rating

Rating

Min

Max

Unit

Storage Temperature

-40

+105

°C

Operating Temperature

-20

+70

°C

PIO/AIO Voltage

-0.4

+1.8

VBAT Voltage

-0.4

+3.6

USB_DP/USB_DN Voltage

-0.4

+3.6

Other Terminal Voltages except RF

-0.4

VBAT+0.4

6.2

Recommended Operating Conditions

Operating Condition

Min

Typical

Max

Unit

Operating Temperature Range

-20

+70

°C

VBAT Voltage

+3.0

+3.3

+4.2

6.3

Input/output Terminal Characteristics

6.3.1

Digital Terminals

Supply Voltage Levels

Min

Typical

Max

Unit

Input Voltage Levels

VIL input logic level low

-0.3

+0.25xVBAT

VIH input logic level high

0.625*VBAT

VBAT+0.3

Output Voltage Levels

VOL output logic level low, lOL = 4.0mA

0.125

VOH output logic level high, lOH = -4.0mA

0.75xVBAT

0.625xVBAT

Input and Tri-state

Current

Ii input leakage current at Vin=+3V3 or 0V

-100

100

Ioz tri-state output leakage current at Vo=+3V3 or 0V

-100

100

With strong pull-up

-100

-40

-10

µA

With strong pull-down

100

µA

With weak pull-up

-5

-1.0

-0.2

µA

With weak pull-down

+1.

5.0

µA

I/O pad leakage current

-1

µA

Table 1

Table 2

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