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GD25R256D Datasheet(PDF) 4 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25R256D Datasheet(HTML) 4 Page - GigaDevice Semiconductor (Beijing) Inc. |
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4 / 82 page ![]() 3.3V Uniform Sector Dual and Quad Serial Flash GD25R256D 4 1. FEATURES ◆ 256M-bit Serial Flash ◆ Fast Program/Erase Speed - 256 Bytes per programmable page - Page Program time: 0.4ms typical - Sector Erase time: 70ms typical ◆ Standard, Dual, Quad SPI - Block Erase time: 0.16/0.22s typical - Standard SPI: SCLK, CS#, SI, SO - Chip Erase time: 70s typical - Dual SPI: SCLK, CS#, IO0, IO1 - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 ◆ Flexible Architecture - 3- or 4-Byte Addressing Mode - Uniform Sectors of 4K-Byte - Uniform Blocks of 32/64K-Byte ◆ High Speed Clock Frequency - Maximum 104MHz for fast read on 3.0 - 3.6V power supply ◆ Low Power Consumption ◆ Dual I/O Data transfer up to 208Mbits/s - 1uA typical deep power down current ◆ Quad I/O Data transfer up to 416Mbits/s - 12uA typical standby current - Maximum 80MHz for fast read on 2.7 - 3.6V power supply ◆ Dual I/O Data transfer up to 160Mbits/s ◆ Advanced Security Features ◆ Quad I/O Data transfer up to 320Mbits/s - 3x2048-Byte Security Registers With OTP Locks - 128-bit Unique ID ◆ Software Write Protection - Serial Flash Discoverable parameters (SFDP) register - Write protect all/portion of memory via software - Top/Bottom Block protection ◆ Single Power Supply Voltage - Full voltage range: 2.7 - 3.6V ◆ RPMC Function(1) - Four 32-bit Monotonic Counters ◆ Data Retention - Volatile HMAC Key Register - 20-year data retention typical - Non-volatile Rood Key Register ◆ Package Information ◆ Allows XIP (execute in place) Operation - SOP16 (300mil) - Continuous Read With 8/16/32/64-Byte Wrap - WSON8 (8*6mm) - TFBGA-24 (5*5 ball array) ◆ Minimum 100,000 Program/Erase Cycles Note: 1.RPMC related information is available at https://downloadcenter.intel.com/download/22646 |
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