HM3207BD datasheet(2/7 Pages) HMSEMI

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Single pulse avalanche energy (Note 4)

EAS

2200

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 175

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Case (Note 1)

RθJC

0.48

℃

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=7

0V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±200

On Characteristics

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

25℃

mΩ

Drain-Source On-State Resistance

125℃

RDS(ON)

VGS=10V, ID=40A

4.7

6.5

mΩ

Forward Transconductance

gFS

VDS=25V,ID=40A

100

165

Dynamic Characteristics

Input Capacitance

Clss

11000

Output Capacitance

Coss

914

Reverse Transfer Capacitance

Crss

VDS=25V,VGS=0V,

F=1.0MHz

695

Switching Characteristics

Turn-on Delay Time

td(on)

Turn-on Rise Time

190

Turn-Off Delay Time

td(off)

130

Turn-Off Fall Time

VDD=30V,ID=2A,RL=15Ω

VGS=10V,RG=2.5Ω

120

Total Gate Charge

250

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

ID=30A,VDD=30V,VGS=10V

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

VGS=0V,IS=40A

1.2

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = 40A

di/dt = 100A/μs(Note2)

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Surface Mounted on FR4 Board, t ≤ 10 sec.

2. Pulse Test: Pulse Width ≤ 400μs, Duty Cycle ≤ 2%.

3. EAS condition：Tj=25℃,VDD=37.5V,VG=10V,L=2mH,Rg=25Ω,IAS=37A

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

HM3207BD

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