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HM5804 Datasheet(PDF) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM5804 Datasheet(HTML) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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4 / 9 page ![]() Rds(ON) of P-channel FET ISW =100mA 0.15 0.3 Ohm Rds(ON) of N-channel FET ISW =100mA 0.11 0.2 Ohm Enable Threshold Vbat = 2.5V to 5.5V 0.3 1 1.5 V Enable Leakage Current -0.1 0.1 µA SW Leakage Current VEN = 0V, VSW = 0V or 5V, Vbat = 4.2V -1 1 uA Overcharge Detection Voltage VCU 4.25 4.30 4.35 V Overcharge Release Voltage VCL 4.05 4.10 4.15 V Overdischarge Detection Voltage VDL 2.3 2.4 2.5 V Overdischarge Release Voltage VDR 2.9 3.0 3.1 V Charger Detection Voltage VCHA -0.07 -0.12 -0.2 V Overdischarge Current1 Detection IIOV1 VDD=3.5V 2.1 3 3.9 A Load Short-Circuiting Detection ISHORT VDD=3.5V 10 20 30 A Equivalent FET on Resistance RDS(ON) VDD=3.6V IVM =1.0A 40 45 55 m Ω Overcharge Voltage Detection Delay Time tCU 130 mS Overdischarge Voltage Detection Delay Time tDL 40 mS Overdischarge Current Detection Delay Time tIOV VDD=3.5V 10 mS Load Short-Circuiting Detection Delay Time tSHORT VDD=3.5V 75 uS HM5804 ______________________________________ |
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