HM7002DW datasheet(2/6 Pages) HMSEMI

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5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )

OFF CHARACTERISTICS

Characteristic

Drain–Source Breakdown Voltage

(VGS = 0, ID = 10μAdc)

Zero Gate Voltage Drain Current

TJ = 25°C

(VGS = 0, VDS = 60 Vdc)

TJ = 125°C

Gate–Body Leakage Current, Forward

(VGS = 20 Vdc)

Gate–Body Leakage Current, Reverse

(VGS = - 20 Vdc)

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(VDS = VGS, ID = 250μAdc)

On–State Drain Current

(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)

Static Drain–Source On–State Voltage

(VGS = 10 Vdc, ID = 500 mAdc)

(VGS = 5.0 Vdc, ID = 50 mAdc)

Static Drain–Source On–State Resistance

(VGS = 10 Vdc, ID = 500 mAdc)

TC = 25°C

TC = 125°C

(VGS = 5.0 Vdc, ID = 50 mAdc)

TC = 25°C

TC = 125°C

Forward Transconductance

(VDS≥ 2.0 VDS(on), ID = 200 mAdc)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

SWITCHING CHARACTERISTICS

BODY–DRAIN DIODE RATINGS

Diode Forward On–Voltage

(IS = 115 mAdc, VGS = 0 V)

Source Current Continuous (Body Diode)

Source Current Pulsed

3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.

Max.

(VDD = 25 Vdc , ID =500

mAdc, RG = 25Ω,RL = 50

Ω,Vgen = 10 V)

0.375

Turn-On Delay Time

Turn-Off Delay Time

td(off)

td(on)

Cobo

Cibo

Symbol

VSD

-1.5

VGS(th)

1.0

7.5

13.5

2.0

IDSS

Vdc

Cibo

Typ.

Unit

VBRDSS

Vdc

Min.

μAdc

Ohms

ID(on)

500

VDS(on)

Vdc

IGSSR

-1.0

mAdc

ISM

500

IGSSF

1.0

5.0

3.75

Vdc

13.5

7.5

1.0

RDS(on)

gfs

mmhos

-115

-800

mAdc

HM7002DW

HM7002DW Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

HM7002DW Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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