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IDP20E65D2 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IDP20E65D2 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 Ultrafast Recovery Diode IDP20E65D2 FEATURES · Ultrafast Recovery Time · Low Forward Voltage · Low Leakage Current · 175℃ Operating Junction Temperature · High Temperature Glass Passivated Junction · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in switching power supplies and other power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 650 V IF(AV) Average Rectified Forward Current 40 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase, tp=8.3ms) 120 A TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃ /W |
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