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SVRGA0508S Datasheet(PDF) 8 Page - VPT, Inc.

Part # SVRGA0508S
Description  SPACE QUALIFIED POINT OF LOAD CONVERTERS
PDF  11 Pages
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Manufacturer  VPT [VPT, Inc.]
Direct Link  https://www.vptpower.com/
Logo VPT - VPT, Inc.

SVRGA0508S Datasheet(HTML) 8 Page - VPT, Inc.

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Sales Information
Phone:(425) 353-3010
Fax: (425) 353-4030
SVFA0515S - 4.0
E-mail: vptsales@vptpower.com
Web: www.vptpower.com
Page 8
SVFA0515S Series
6.5 RADIATION HARDNESS ASSURANCE
VPT takes a conservative approach to radiation testing to ensure product performance in a space environment.
VPT’s DLA-approved
Radiation Hardness Assurance (RHA) plan documents VPT’s processes and procedures for guaranteeing the performance of VPT
products under various environmental conditions in space including Total Ionizing Dose (TID) and Single-Event Effects (SEE).
Additionally, Enhanced Low Dose-Rate Sensitivity (ELDRS) effects are considered for all bipolar ICs used in the hybrid. Hardness is
guaranteed by a combination of both hybrid-level characterization and Radiation Lot Acceptance Testing (RLAT) of all sensitive
semiconductor piece-parts used within the hybrid.
6.5.1 Radiation Test and Performance Levels
Radiation Environment
Piece Part RLAT
Hybrid-Level
Characterization
Total Ionizing Dose
(TID)
High Dose Rate (HDR)
40 krad(Si)
40 krad(Si)
Low Dose Rate (LDR)
140 krad(Si)
40 krad(Si)
Single-Event Effects
(SEE)
Destructive (SEB, SEGR, SEL)
Not applicable
≥ 85 MeV/mg/cm2
Non-Destructive (SET, SEU)
Not applicable
≥ 85 MeV/mg/cm2
Displacement Damage
(DD)
1x1012 n/cm2
Not applicable
1. Piece-part LDR screening performed only on potentially ELDRS parts (bipolar ICs).
6.5.2 RHA Plan Summary
Test
RHA Plan for SVL Series Isolated DC-DC Converters
Total Ionizing Dose (TID):
Sensitive semiconductor components undergo RLAT to 40 krad(Si) per
MIL-STD-883 Method 1019. Converters are characterized to 40 krad(Si).
Enhanced Low Dose Rate Sensitivity (ELDRS):
All bipolar linear ICs are characterized for ELDRS and tested in accordance
with MIL-STD-883 test method 1019 section 3.13
Single Event Effects (SEE):
Converters are characterized
to LET ≥ 85 MeV/mg/cm2 for both catastrophic
events (SEL, SEB, SEGR) and functional interrupts (SEFI) under heavy ion
exposure. Converters are also characterized for cross-section and magnitude
of output transients (SET) for at least 3 different LET levels.
Radiation Lot Acceptance Testing (RLAT):
All production lots of sensitive semiconductor components undergo RLAT for
TID at HDR and/or LDR as appropriate per part type.
Displacement Damage (DD):
Sensitive semiconductor components undergo RLAT to 1x1012 n/cm2 per
MIL-STD-883 Method 1017.
6.5.3 RHA Designators available on SMD
The SVFA0515S series converters are available on SMD with RHA level P. See section 8.0 for full SMD number information.
6.5.4 Supporting Documentation Available (Contact Sales)
•
Radiation Hardness Assurance Plan:
DLA-approved RHA plan covering TID, SEE, and ELDRS
•
Worst-Case Analysis Report:
Detailed worst-case analysis including electrical stress/derating limits and
guaranteed circuit performance post-radiation and end of life
•
Radiation Test Summary Report:
Overview of piece-part RLAT and hybrid characterization for all guaranteed
environments. Also includes SEE cross-section data.
•
Reliability Report:
MTBF report based on MIL-HDBK-217 reliability calculations.
•
Thermal Analysis Report:
Component temperature rise analysis and measurement results.



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