Features

• High Surge Capability

Three Tower Package

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Parameter

Symbol

MBRT600150(R)

Unit

Repetitive peak reverse voltage

150

V

RMS reverse voltage

106

V

DC blocking voltage

150

V

Operating temperature

-55 to 150

°C

Storage temperature

-55 to 150

°C

Parameter

Symbol

MBRT600150(R)

Unit

Average forward current (per

pkg)

600

A

Maximum instantaneous forward

voltage (per leg)

0.88

1

10

50

Thermal characteristics

Thermal resistance, junction-

case (per leg)

0.28

°C/W

A

10

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

Peak forward surge current

(per leg)

Silicon Power

Schottky Diode

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

mA

V

MBRT600150 thru MBRT600200R

Conditions

200

141

MBRT600200(R)

-55 to 150

• Types from 150 V to 200 V V

RRM

MBRT600200(R)

0.28

0.92

50

600

4000

4000

-55 to 150

Conditions

200

1

1

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/mbrt600150.pdf