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HM2010D Datasheet(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM2010D Datasheet(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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3 / 16 page ![]() 3 ABSOLUTE MAXIMUM RATINGS PARAMETER UNIT Supply Voltage -0.3V to 6.5V Storage Temperature -45°C to 150°C Input Voltage -0.3V to VDD+0.3V Power Dissipation Internally Limited ESD Rating (HBM) 4000V Junction Temperature 150°C Soldering Information Vapor Phase (60 sec.) 215°C Infrared (15 sec.) 220°C Note: Stresses beyond those listed under absolute maximun ratings may cause permanent damage to the device. These are stress ratings only,and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. PACKAGE DISSIPATION RATINGS PACKAGE θ JA UNIT COL1.5x1.5-9L 90 ~ 220 °C/W MSOP-8L 180 °C/W DFN2x2-8L 148 °C/W RECOMMENDED OPERATING CONDITIONS PARAMETER MIN TYP MAX UNIT Operating Voltage, VDD 2.7 5.5 V Operating Temperature, TA -40 +85 °C Load Impedance, ZL 3.2 Ω |
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