M30L0R8000B0 datasheet(1/83 Pages) STMICROELECTRONICS

Part #	M30L0R8000B0

Description	256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory

PDF	83 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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May 2005

M30L0R8000T0

M30L0R8000B0

256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst)

1.8V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

–VDD = 1.7V to 2.0V for program, erase and

read

–VDDQ = 1.7V to 2.0V for I/O Buffers

–VPP = 9V for fast program (12V tolerant)

■

SYNCHRONOUS / ASYNCHRONOUS READ

–

Synchronous Burst Read mode:

54MHz

–

Asynchronous Page Read mode

–

Random Access: 85ns

■

SYNCHRONOUS BURST READ SUSPEND

■

PROGRAMMING TIME

–

10µs typical Word program time using

Buffer Enhanced Factory Program

command

■

MEMORY ORGANIZATION

–

Multiple Bank Memory Array: 16 Mbit

Banks

–

Parameter Blocks (Top or Bottom

location)

■

DUAL OPERATIONS

–

program/erase in one Bank while read in

others

–

No delay between read and write

operations

■

BLOCK LOCKING

–

All blocks locked at power-up

–

Any combination of blocks can be locked

with zero latency

–WP for Block Lock-Down

–

Absolute Write Protection with VPP = VSS

■

SECURITY

–

64 bit unique device number

–

2112 bit user programmable OTP Cells

■

COMMON FLASH INTERFACE (CFI)

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

Figure 1. Package

■

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

–

Top Device Code,

M30L0R8000T0: 880Dh.

–

Bottom Device Code,

M30L0R8000B0: 880Eh.

■

PACKAGE

–

Compliant with Lead-Free Soldering

Processes

–

Lead-Free Versions

TFBGA88 (ZAQ) 8 x 10mm

FBGA

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