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MBR20040CT Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part # MBR20040CT
Description  Silicon Power Schottky Diode
PDF  3 Pages
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

MBR20040CT Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  MBR20040CT Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. MBR20040CT Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. MBR20040CT Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 20 V - 40 V
IF(AV) = 200 A
Features
• High Surge Capability
Twin Tower Package
• Not ESD Sensitive
Parameter
Symbol
MBR20020CT(R) MBR20030CT(R)
Unit
Repetitive peak reverse
voltage
VRRM
20
30
V
RMS reverse voltage
VRMS
14
21
V
DC blocking voltage
VDC
20
30
V
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
MBR20020CT(R) MBR20030CT(R)
Unit
Average forward current
(per pkg)
IF(AV)
200
200
A
Maximum forward
voltage (per leg)
0.70
0.70
1
1
10
10
30
30
Thermal characteristics
Thermal resistance,
junction-case, per leg
RthJC
0.45
0.45
°C/W
Silicon Power
Schottky Diode
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Reverse current at rated
DC blocking voltage
(per leg)
IR
VF
30
0.45
Tj = 150 °C
MBR20020CT thru MBR20040CTR
Tj = 25 °C
IFM = 100 A, Tj = 25 °C
Conditions
MBR20040CT(R)
35
25
MBR20035CT(R)
-55 to 150
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
-55 to 150
MBR20040CT(R)
1
1
MBR20035CT(R)
mA
0.45
0.70
0.70
30
Tj = 100 °C
10
10
V
-55 to 150
-55 to 150
Conditions
40
28
40
35
A
• Types from 20 to 40 V V
RRM
TC = 125 °C
200
200
Peak forward surge
current (per leg)
IFSM
tp = 8.3 ms, half sine
1500
1500
1500
1500
1
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr20020ct.pdf


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