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MBR20040CT Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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MBR20040CT Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
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1 / 3 page ![]() VRRM = 20 V - 40 V IF(AV) = 200 A Features • High Surge Capability Twin Tower Package • Not ESD Sensitive Parameter Symbol MBR20020CT(R) MBR20030CT(R) Unit Repetitive peak reverse voltage VRRM 20 30 V RMS reverse voltage VRMS 14 21 V DC blocking voltage VDC 20 30 V Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol MBR20020CT(R) MBR20030CT(R) Unit Average forward current (per pkg) IF(AV) 200 200 A Maximum forward voltage (per leg) 0.70 0.70 1 1 10 10 30 30 Thermal characteristics Thermal resistance, junction-case, per leg RthJC 0.45 0.45 °C/W Silicon Power Schottky Diode Electrical characteristics, at Tj = 25 °C, unless otherwise specified Reverse current at rated DC blocking voltage (per leg) IR VF 30 0.45 Tj = 150 °C MBR20020CT thru MBR20040CTR Tj = 25 °C IFM = 100 A, Tj = 25 °C Conditions MBR20040CT(R) 35 25 MBR20035CT(R) -55 to 150 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) -55 to 150 MBR20040CT(R) 1 1 MBR20035CT(R) mA 0.45 0.70 0.70 30 Tj = 100 °C 10 10 V -55 to 150 -55 to 150 Conditions 40 28 40 35 A • Types from 20 to 40 V V RRM TC = 125 °C 200 200 Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 1500 1500 1500 1500 1 Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbr20020ct.pdf |
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