IXTP06N120P datasheet(1/5 Pages) IXYS

Part #	IXTP06N120P

Description	N-Channel Enhancement Mode Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

1200

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

1200

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C

0.6

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

1.2

A

I

A

T

C = 25C

0.6

A

E

AS

T

C = 25C50

mJ

dV/dt

I

S

 I

DM, VDD  VDSS, TJ  150C

10

V/ns

P

D

T

C = 25C42

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

F

C

Mounting Force (TO-263)

10..65 / 2.2..14.6

N/lb

M

d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in

Weight

TO-263

2.5

g

TO-220

3.0

g

DS99872E(6/18)

PolarTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA06N120P

IXTP06N120P

V

DSS

= 1200V

I

D25

= 0.6A

R

DS(on) 

 34



Symbol

Test Conditions

Characteristic Values

(T

J = 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250A

1200

V

GS(th)

V

DS = VGS, ID = 50A

2.0

4.0

V

I

GSS

V

GS = 30V, VDS = 0V

50 nA

I

DSS

V

DS = VDSS, VGS = 0V

3

A

T

J = 125C

125

A

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

27

34



G = Gate

D

= Drain

S = Source

Tab = Drain

TO-263 (IXTA)

G

S

D (Tab)

TO-220 (IXTP)

D (Tab)

S

G

D

Features



International Standard Packages



Low Q

G



Avalanche Rated



Low Package Inductance



Fast Intrinsic Rectifier

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



DC-DC Converters



Switch-Mode and Resonant-Mode

Power Supplies



AC and DC Motor Drives





Discharge Circiuts in Lasers, Spark

Igniters, RF Generators





High Voltage Pulse Power

Applications

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