IXTT52N30P datasheet(1/6 Pages) IXYS

Part #	IXTT52N30P

Description	N-Channel Enhancement Mode Power MOSFETs

PDF	6 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 6 page

DS99115F(9/13)

PolarTM

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated

IXTT52N30P

IXTQ52N30P

V

DSS

= 300V

I

D25

= 52A

R

DS(on) 

 73m



Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

300

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

300

V

GSS

Continuous

 20

V

GSM

Transient

 30

V

I

D25

T

C = 25C

52

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

150

A

I

A

T

C = 25C52

A

E

AS

T

C = 25C1

J

dv/dt

I

S

 I

DM, VDD  VDSS, TJ  150°C

10

V/ns

P

D

T

C = 25C

400

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

M

d

Mounting Torque (TO-3P)

1.13 / 10

Nm/lb.in

Weight

TO-286

4.0

g

TO-3P

5.5

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

300

V

GS(th)

V

DS = VGS, ID = 250μA

2.5

5.0

V

I

GSS

V

GS = 20V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

A

T

J = 125C

250

A

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

73 m



Features



Fast Intrinsic Rectifier



Avalanche Rated



Low R

DS(ON) and QG



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



Laser Drivers



AC and DC Motor Drives



Robotics and Servo Controls

TO-3P (IXTQ)

D

G

S

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-268 (IXTT)

S

G

D (Tab)

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IXTT52N30P Datasheet(PDF) 1 Page - IXYS Corporation

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