IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY1N120P

IXTA1N120P

IXTP1N120P

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

0.55

0.90

S

C

iss

445

pF

C

oss

V

25

pF

C

rss

5.4

pF

Q

g(on)

17.6

nC

Q

gs

V

3.5

nC

Q

gd

10.6

nC

t

d(on)

20

ns

t

r

28

ns

t

d(off)

54

ns

t

f

27

ns

R

thJC

2.0

C/W

R

thCS

TO-220

0.50

C/W

Resistive Switching Times

V

R

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

1

A

I

SM

Repetitive, Pulse Width Limited by T

JM

3

A

V

SD

I

1.5

V

t

rr

900

ns

I

2. On through-hole packages, R

location must be 5mm or less from the package body.