SSM3K35CTC datasheet(4/9 Pages) TOSHIBA

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SSM3K35CTC

5.4.

5.4. Gate Charge Characteristics (Unless otherwise specified, T

Gate Charge Characteristics (Unless otherwise specified, T

Gate Charge Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1

Gate-drain charge

Symbol

Qgs1

Qgd

Test Condition

VDD = 10 V, ID = 200 mA,

VGS = 4.5 V

Min



Typ.

0.34

0.09

0.16

Max



Unit

5.5.

5.5. Source-Drain Characteristics (Unless otherwise specified, T

Source-Drain Characteristics (Unless otherwise specified, T

Source-Drain Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Diode forward voltage

(Note 1)

Symbol

VDSF

Test Condition

ID = -150 mA, VGS = 0 V

Min



Typ.

-0.8

Max

-1.2

Unit

Note 1: Pulse measurement.

6. Marking

Marking

Fig.

Fig. 6.1

6.1

6.1 Marking

Marking

Fig.

Fig. 6.2

6.2

6.2 Pin Condition (top view)

Pin Condition (top view)

2017-12-04

Rev.3.0

Toshiba Electronic Devices & Storage Corporation

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