IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA/IXTP 3N120

IXTA/IXTP 3N110

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

1.5

2.2

S

C

iss

1050 1300

pF

C

oss

V

GS

= 0 V, V

100

125

pF

C

rss

25

50

pF

t

d(on)

17

n s

t

r

V

GS

= 10 V, V

15

n s

t

d(off)

R

32

n s

t

f

18

n s

Q

g(on)

39

nC

Q

gs

V

GS

= 10 V, V

9nC

Q

gd

22

nC

R

thJC

0.8

K/W

R

thCK

(TO-220)

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

3

A

I

SM

Repetitive; pulse width limited by T

JM

12

A

V

SD

I

1.5

V

t

rr

I

700

n s

TO-263 (IXTA) Outline

1. Gate

2. Drain

3. Source

4. Drain

BottomSide

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

A1

2.03

2.79.080

.110

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.46

0.74

.018

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

7.11

8.13

.280

.320

E

9.65

10.29

.380

.405

E1

6.86

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.292.79

.09

0

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.38

0

.015

R

0.46

0.74

.018

.029

Pins:

1 - Gate

2 - Drain

3 - Source

4 - Drain

Bottom Side

TO-220 (IXTP) Outline

Notes: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %