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ISCNH114P Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCNH114P Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor ISCNH114P · ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA 600 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 8A 0.55 Ω IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 ± 100 nA IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 10 uA VSD Diode Forward Voltage IS= 8A; VGS= 0 2.0 V |
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