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ISCNH117B Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNH117B Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCNH117B · DESCRIPTION · Drain Current: ID= 50A@ TC=25℃ · Drain Source Voltage : VDSS= 70V(Min) · Fast Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS . · Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 70 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 50 A PD Total Dissipation@TC=25℃ 230 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.65 ℃ /W |
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