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HZS10NB2 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # HZS10NB2
Description  Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
PDF  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HZS10NB2 Datasheet(HTML) 2 Page - Renesas Technology Corp

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HZS-N Series
Rev.1.00, Mar.11.2004, page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
400
mW
Junction temperature
Tj
200
°C
Storage temperature
Tstg
−55 to +175
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
Reverse Current
Dynamic Resistance
VZ (V)*
1
Test
Condition
IR (µA)
Test
Condition
rd (Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
B1
1.88
2.10
HZS2.0N
B2
2.02
2.20
5
120
0.5
100
5
B1
2.12
2.30
HZS2.2N
B2
2.22
2.41
5
120
0.7
100
5
B1
2.33
2.52
HZS2.4N
B2
2.43
2.63
5
120
1.0
100
5
B1
2.54
2.75
HZS2.7N
B2
2.69
2.91
5
100
1.0
110
5
B1
2.85
3.07
HZS3.0N
B2
3.01
3.22
5
50
1.0
120
5
B1
3.16
3.38
HZS3.3N
B2
3.32
3.53
5
20
1.0
120
5
B1
3.47
3.68
HZS3.6N
B2
3.62
3.83
5
10
1.0
120
5
B1
3.77
3.98
HZS3.9N
B2
3.92
4.14
5
5
1.0
120
5
B1
4.05
42.6
B2
4.20
4.40
HZS4.3N
B3
4.34
4.53
5
5
1.0
120
5
B1
4.47
4.65
B2
4.59
4.77
HZS4.7N
B3
4.71
4.91
5
5
1.0
100
5
B1
4.85
5.03
B2
4.97
5.18
HZS5.1N
B3
5.12
5.35
5
5
1.5
70
5
B1
5.29
5.52
B2
5.46
5.70
HZS5.6N
B3
5.64
5.88
5
5
2.5
40
5
B1
5.81
6.06
B2
5.99
6.24
HZS6.2N
B3
6.16
6.40
5
5
3.0
30
5
B1
6.32
6.59
B2
6.52
6.79
HZS6.8N
B3
6.70
6.97
5
2
3.5
25
5
Note:
1. Tested with pulse (PW = 40 ms)



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