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FCP20N60 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FCP20N60 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor FCP20N60 DESCRIPTION · Drain Current ID=20A@ TC=25℃ · Drain Source Voltage- : VDSS=600V(Min) · Fast Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in switching mode operation for system min-iaturization and higher efficiency. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ± 30 V ID Drain Current-continuous@ TC=25℃ 20 A PD Power Dissipation @TC=25℃ 280 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃ /W |
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