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RFASWA697ATF09 Datasheet(PDF) 2 Page - WALSIN TECHNOLOGY CORPORATION |
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RFASWA697ATF09 Datasheet(HTML) 2 Page - WALSIN TECHNOLOGY CORPORATION |
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2 / 8 page ![]() Approval Sheet Page 2 of 8 ASC_RFASWA697ATF09_V03 Apr. 2018 FEATURES Low Insertion Loss :1.0dB typ. @ 6.0GHz High Isolation :17dB typ. @ 6.0GHz Low control voltage :1.35 to 4.5 V Miniature footprint :1.0 x 1.0 x 0.37 mm3: Moisture Sensitive Level 3 (MSL3) : High ESD tolerance of 1kV HBM at all pins Description The RFASWA697ATF09 is a SOI (Silicon On Insulator) Single-Pole, Double-Throw (SPDT) high power switch that operating at 0.4-6.0 GHz. The RFASWA697ATF09 is manufactured in a LGA-6 (1.0 x 1.0 x 0.37 mm3) package. The RFASWA697ATF09 features very high isolation with very low DC power consumption. The RFASWA697ATF09 has ESD protection devices to achieve excellent ESD performances. Application Multi-mode 2G/3G, LTE application receive system. Block Diagram and Pin Out (Top View) 1 2 6 5 3 4 Pin Names and Descriptions Pin Name Description Pin Name Description 1 VDD DC power supply 4 RF2 RF path 2 2 RF1 RF path 1 5 VCTL DC control voltage 3 GND Ground 6 RFC RF common port RF1 RF2 RFC VDD VCTL Bias Decoder |
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