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ISCNH124W Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCNH124W Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor ISCNH124W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 3 4 5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 10A 18.6 22 mΩ IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ± 200 nA IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 10 μ A VSD Forward On-Voltage IS= 18A; VGS= 0 2 V Ciss Input Capacitance VDS=50V;VGS=0V; f=1.0MHz 11.3 nF Coss Output Capacitance 533 pF Crss Reverse Transfer Capacitance 3.7 pF Qg Total Gate Charge VDS=480V; ID=57A; VGS=10V 168 nC Qgs Gate-Source Charge 78 nC Qgd Gate-Drain Charge 46.5 nC td(on) Turn-on Delay Time VDD= 400V ; ID=57A; RG= 1.8Ω;VGS=10V 29 nS tr Turn-on Rise Time 26 nS td(off) Turn-Off Delay Time 74 nS tf Turn-Off Fall Time 6 nS |
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