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2N4401 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # 2N4401
Description  General Purpose Transistor
PDF  6 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

2N4401 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  2N4401 Datasheet HTML 1Page - First Silicon Co., Ltd 2N4401 Datasheet HTML 2Page - First Silicon Co., Ltd 2N4401 Datasheet HTML 3Page - First Silicon Co., Ltd 2N4401 Datasheet HTML 4Page - First Silicon Co., Ltd 2N4401 Datasheet HTML 5Page - First Silicon Co., Ltd 2N4401 Datasheet HTML 6Page - First Silicon Co., Ltd  
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ELECTRICAL CHARACTERISTICS (T A= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS ( 3 )
h
n
i
a
G
t
n
e
rr
u
C
C
D
FE
––
(I C = 0.1 mAdc, V CE
–
–
0
2
)
c
d
V
0
.
1
=
(I C = 1.0 mAdc, V CE
–
–
0
4
)
c
d
V
0
.
1
=
(I C = 10 mAdc, V CE
–
–
0
8
)
c
d
V
0
.
1
=
(I C = 150 mAdc, V CE
0
0
3
0
0
1
)
c
d
V
0
.
1
=
(I C = 500 mAdc, V CE
–
–
0
4
)
c
d
V
0
.
2
=
Collector–Emitter Saturation Voltage
VCE(sat)
Vdc
(I C = 150 mAdc, I B
4
.
0
–
–
)
c
d
A
m
5
1
=
(I C = 500 mAdc, I B
5
7
.
0
–
–
)
c
d
A
m
0
5
=
V
e
g
a
tl
o
V
n
o
it
a
r
u
t
a
S
r
e
tt
i
m
E
–
e
s
a
B
BE(sat)
Vdc
(I C = 150 mAdc, I B
5
9
.
0
5
7
.
0
)
c
d
A
m
5
1
=
(I C = 500 mAdc, I B
2
.
1
–
–
)
c
d
A
m
0
5
=
SMALL–SIGNAL CHARACTERISTICS
f
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
—
n
i
a
G
–
t
n
e
rr
u
C
T
MHz
(I C = 20 mAdc, V CE
–
–
0
5
2
)
z
H
M
0
0
1
=
f
,
c
d
V
0
1
=
C
e
c
n
a
ti
c
a
p
a
C
e
s
a
B
–
r
o
t
c
e
ll
o
C
cb
pF
(V CB= 5.0 Vdc, I E
5
.
6
–
–
)
z
H
M
0
.
1
=
f
,
0
=
C
e
c
n
a
ti
c
a
p
a
C
e
s
a
B
–
r
e
tt
i
m
E
eb
pF
(V EB = 0.5 Vdc, I C
0
3
–
–
)
z
H
M
0
.
1
=
f
,
0
=
h
e
c
n
a
d
e
p
m
I
t
u
p
n
I
ie
kΩ
(V CE= 10 Vdc, I C
5
1
0
.
1
)
z
H
k
0
.
1
=
f
,
c
d
A
m
0
.
1
=
h
o
it
a
R
k
c
a
b
d
e
e
F
e
g
a
tl
o
V
re
X 10
–4
(V CE= 10 Vdc, I C
0
.
8
1
.
0
)
z
H
k
0
.
1
=
f
,
c
d
A
m
0
.
1
=
h
n
i
a
G
t
n
e
rr
u
C
l
a
n
g
i
S
–
ll
a
m
S
fe
—
(V CE= 10 Vdc, I C
0
0
5
0
4
)
z
H
k
0
.
1
=
f
,
c
d
A
m
0
.
1
=
h
e
c
n
a
tt
i
m
d
A
t
u
p
t
u
O
oe
µ
mhos
(V CE= 10 Vdc, I C
0
3
0
.
1
)
z
H
k
0
.
1
=
f
,
c
d
A
m
0
.
1
=
SWITCHING CHARACTERISTICS
Delay Time
(V CC = 30 Vdc, V EB = 2.0 Vdc
t d
—
15
Rise Time
I C = 150 mAdc, I B1 = 15 mAdc)
t r
—
20
ns
Storage Time
(V CC = 30 Vdc, I C = 150 mAdc
t s
—
225
ns
Fall Time
I B1 = I B2 = 15 mAdc)
t f
—
30
Figure 1. Turn–On Time
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
1.0 kΩ
+30 V
200Ω
C
S*< 10 pF
1.0 kΩ
+30 V
200 Ω
C
S* < 10 pF
1N916
+ 16 V
–14 V
< 20 ns
<2.0 ns
– 2.0V
+ 16 V
Figure 2. Turn–Off Time
1.0 to 100µs,
DUTY CYCLE = 2%
SWITCHING TIME EQUIVALENT TEST CIRCUITS
0
0
1.0 to 100µs,
DUTY CYCLE = 2%
– 4.0 V
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
2008. 08. 08
2/6
Revision No : 0
SEMICONDUCTOR
TECHNICAL DATA
2N4401



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