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HSMS2850 Datasheet(PDF) 3 Page - Agilent(Hewlett-Packard) |
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HSMS2850 Datasheet(HTML) 3 Page - Agilent(Hewlett-Packard) |
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3 / 6 page ![]() 3 Equivalent Circuit Model HSMS-2850, HSMS-2860; Singles SPICE Parameters Parameter Units HSMS-285X HSMS-286X BV V 3.8 7.0 CJ0 pF 0.18 0.18 EG eV 0.69 0.69 IBV A 3 x 10E-4 10E-5 IS A 3 x 10E-6 5.0 x 10E-8 N 1.06 1.08 RS Ω 25 5.0 PB (VJ) V 0.35 0.65 PT (XTI) 2 2 M 0.5 0.5 0.18 pF Rj RS 0.08 pF 2 nH Rj = 8.33 X 10 -5 nT Ib + Is where Ib = externally applied bias current in amps Is = saturation current (see table of SPICE parameters) T = temperature, °K n = identity factor (see table of SPICE parameters) RS = series resistance (see Table of SPICE parameters) ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge. Absolute Maximum Ratings, Ta = +25°C, Single Diode Symbol Parameter Absolute Maximum[1] HSMS-285x HSMS-286x PT Total Device Dissipation[2] 75 mW 250 mW PIV Peak Inverse Voltage 2.0 V 4.0 V TJ Junction Temperature 150 °C 150 °C TSTG Storage Temperature -65 °C to 150°C-65°C to 150°C TOP Operating Temperature -65 °C to 150°C-65°C to 150°C Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. CW Power Dissipation at T LEAD = +25°C. Derate linearly to zero at maximum rated temperature. |
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