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HSMS2850 Datasheet(PDF) 3 Page - Agilent(Hewlett-Packard)

Part # HSMS2850
Description  Surface Mount Microwave Schottky Detector Diodes
PDF  6 Pages
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Manufacturer  HP [Agilent(Hewlett-Packard)]
Direct Link  http://www.home.agilent.com
Logo HP - Agilent(Hewlett-Packard)

HSMS2850 Datasheet(HTML) 3 Page - Agilent(Hewlett-Packard)

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Equivalent Circuit Model
HSMS-2850, HSMS-2860;
Singles
SPICE Parameters
Parameter
Units
HSMS-285X
HSMS-286X
BV
V
3.8
7.0
CJ0
pF
0.18
0.18
EG
eV
0.69
0.69
IBV
A
3 x 10E-4
10E-5
IS
A
3 x 10E-6
5.0 x 10E-8
N
1.06
1.08
RS
Ω
25
5.0
PB (VJ)
V
0.35
0.65
PT (XTI)
2
2
M
0.5
0.5
0.18 pF
Rj
RS
0.08 pF
2 nH
Rj =
8.33 X 10
-5 nT
Ib + Is
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature,
°K
n = identity factor (see table of SPICE parameters)
RS = series resistance (see Table of SPICE parameters)
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
Absolute Maximum Ratings, Ta = +25°C, Single Diode
Symbol
Parameter
Absolute Maximum[1]
HSMS-285x
HSMS-286x
PT
Total Device Dissipation[2]
75 mW
250 mW
PIV
Peak Inverse Voltage
2.0 V
4.0 V
TJ
Junction Temperature
150
°C
150
°C
TSTG
Storage Temperature
-65
°C to 150°C-65°C to 150°C
TOP
Operating Temperature
-65
°C to 150°C-65°C to 150°C
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. CW Power Dissipation at T
LEAD = +25°C. Derate linearly to zero at
maximum rated temperature.



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