MIC4609 datasheet(5/34 Pages) MICROCHIP

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 2016 Microchip Technology Inc.

DS20005531A-page 5

MIC4609

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage (VDD, VXHB - VXHS) .................. -0.3V to +25V

Input Voltages (V

LI, VXHI, VEN) .......................... -0.3V to VDD

Voltage on LO (V

LO) .......................................... -0.3V to VDD

Voltage on HO (V

HO) .................................VHS - 0.3V to VHB

Voltage on HS .................................................... -5V to +630V

Voltage on HB ...............................................................+655V

Storage Temperature ...................................-60°C to +150°C

ESD Rating

HBM .......................................................................... 2kV

CDM...................................................................... 1.5 kV

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated in the operational listings of this specification

is not implied. Exposure to maximum rating conditions

for extended periods may affect device reliability.

Operating Ratings (1)

Supply Voltage (VDD) ....................................... +10V to +20V

Voltage on xHS (continuous) ............................. -1V to +600V

Voltage on xHS (repetitive transient) ................. -5V to +600V

HS Slew Rate .............................................................. 50V/ns

Voltage on xHB .............................V

HS + 10V to VXHS + 20V

and/or ........................................VDD - 1V to VDD + 600V

Junction Temperature (TJ) ........................... -40°C to +125°C

Junction Thermal Resistance (

JA).............. -40°C to +125°C

SOIC Wide 28LD ................................................ 53°C/W

Note

1: The device is not guaranteed to function

outside its operating rating.

AC/DC ELECTRICAL CHARACTERISTICS (Note 1, 2)

Electrical Specifications: Unless otherwise indicated, VDD = VxHB = 20V, VEN = 5V, VSS = VxHS = 0V; No load on

xLO or xHO, TA = +25°C. Bold values indicate -40°C TJ +125°C.

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Supply Current

VDD Quiescent Current

IDD

—150

250

µA

xLI = xHI = 0V

VDD Shutdown Current

IDDSH

—0.1

µA

EN = 0V with HS = floating

or ground

VDD Operating Current

IDDO

—240

350

µA

f = 20 kHz

Total xHB Quiescent Current

IxHB

—81

180

µA

xLI = xHI = 0V or

xLI = 0V and xHI = 5V

Total xHB Operating Current

IxHBO

—600

1500

µA

f = 20 kHz

High-Side Leakage Current

ILxHB

—1

µA

VxHB = VxHS = 600V

Input (TTL: xLI, xHI, EN)

Low-Level Input Voltage

VIL

——

0.8

High-Level Input Voltage

VIH

2.2

——

Input Voltage Hysteresis

VHYS

—0.2

—

Input Pull-Down Resistance

100

370

500



For xLI and xHI only (Note 3)

Undervoltage Protection

VDD Falling Threshold

VDDR

VDD Threshold Hysteresis

VDDH

—0.5

—

xHB Falling Threshold

VxHBR

xHB Threshold Hysteresis

VxHBH

—0.5

—

Note 1:

Specification for packaged product only.

The x in the suffix of a pin name designates any of the three phases, e.g., xHS refers to either AHS, BHS

or CHS.

Enable resistance is typical only and is not production tested.

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