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BUJD103AD Datasheet(PDF) 5 Page - WeEn Semiconductors |
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BUJD103AD Datasheet(HTML) 5 Page - WeEn Semiconductors |
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5 / 10 page ![]() BUJ103AD Silicon diffused power transistor VIM = 6 V to +8 V; VCC = 250 V; tp =20 s; =t p/T = 0.01. RB and RL calculated from ICon and IBon requirements. Fig 5. Test circuit for resistive load switching Fig 6. Switching times waveforms for resistive load VCC = 300 V; VBB = 5 V; LC = 200 H; LB = 1 H. Fig 7. Test circuit for inductive load switching Fig 8. Switching times waveforms for inductive load 001aab989 tp RB VIM 0 RL DUT VCC T 001aab990 IC IB 10 % 10 % 90 % 90 % ton toff ts tf t t IBon −IBoff ICon tr ≤ 30 ns 001aab991 VCC LC DUT LB IBon VBB 001aab992 IC IB 90 % toff IBon ts tf t t −IBoff ICon 10 % WeEn Semiconductors BUJ103AD All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet Rev.3 18 October 2016 5 / 10 |
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