WeEn Semiconductors

BUJD203AX

NPN power transistor with integrated diode

BUJD203AX

All information provided in this document is subject to legal disclaimers.

Product data sheet

9 October 2018

5 / 13

7. Thermal characteristics

Table 4. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance

from junction to

heatsink

with heatsink compound; Fig. 5

-

-

4.8

K/W

thermal resistance

from junction to

ambient free air

in free air

-

55

-

K/W

001aag169

1

10

(K/W)

10

1

1/f

P

t

1/f

δ =

δ = 0.5

0.2

0.1

0.05

0.02

0

Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration

8. Isolation characteristics

Table 5. Isolation characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;

external heatsink; clean and dust free

-

-

2500

V

isolation capacitance

external heatsink

-

10

-

pF