Rating

Symbol

Value

Unit

Reverse Voltage

VR

30

Volts

Forward Power Dissipation

@ TA = 25°C

Derate above 25

°C

PD

225

2.0

mW

mW/

°C

Forward Current (DC)

IF

200 Max

mA

Junction Temperature

TJ

125 Max

°C

Storage Temperature Range

Tstg

– 55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage (IR = 10 µA)

V(BR)R

30

—

—

Volts

Total Capacitance (VR = 1.0 V, f = 1.0 MHz)

CT

—

7.6

10

pF

Reverse Leakage (VR = 25 V)

IR

—

0.5

2.0

µAdc

Forward Voltage (IF = 0.1 mAdc)

VF

—

0.22

0.24

Vdc

Forward Voltage (IF = 30 mAdc)

VF

—

0.41

0.5

Vdc

Forward Voltage (IF = 100 mAdc)

VF

—

0.52

1.0

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1

trr

—

—

5.0

ns

Forward Voltage (IF = 1.0 mAdc)

VF

—

0.29

0.32

Vdc

Forward Voltage (IF = 10 mAdc)

VF

—

0.35

0.40

Vdc

Forward Current (DC)

IF

—

—

200

mAdc

Repetitive Peak Forward Current

IFRM

—

—

300

mAdc

Non–Repetitive Peak Forward Current (t < 1.0 s)

IFSM

—

—

600

mAdc

ANODE

1

CATHODE

3

These Schottky barrier diodes are designed for high speed switching applications,

circuit protection, and voltage clamping. Extremely low forward voltage reduces

conduction loss. Miniature surface mount package is excellent for hand held and

portable applications where space is limited.

• Extremely Fast Switching Speed

• Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc

Barrier Diodes

Schottky

•

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

FDR54LT1G

3000/Tape&Reel

FDR54LT3G

10000/Tape&Reel

JV3

JV3

J

We declare that the material of product

compliance with RoHS requirements.

SEMICONDUCTOR

TECHNICAL DATA

FDR54

2011. 07. 13

1/3

Revision No : 0

SOT –23

1

3

2