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WNB051C5APTS Datasheet(PDF) 3 Page - WeEn Semiconductors |
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WNB051C5APTS Datasheet(HTML) 3 Page - WeEn Semiconductors |
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3 / 7 page ![]() WeEn Semiconductors WNB051C5APTS WNB051C5APTS All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 29 October 2017 3 / 6 6. Characteristics Table 3. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IF = 1 A; Tj = 25 °C - 1.25 1.7 V VF** forward voltage IF = 2 A; Tj = 25 °C - - 2 V VR = 600 V; Tj = 25 °C - - 10 µA IR reverse current VR = 600 V; Tj = 125 °C - - 0.2 mA Dynamic characteristics trr** reverse recovery time IF = 1A; dIF/dt = 100 A/µs; VR = 30 V; Tj = 25 °C; - 30 - ns Notes: (1) * mean that parameter are 100% test at T amb = 25. (2) ** means that the guaranteed ratings and parameter limits will depend on the assembled structure. When correctly assembled with suitable die bonding and wire bonding, the device will have ratings and characteristics guaranteed in this data sheet . |
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