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WNB111S5APTS Datasheet(PDF) 4 Page - WeEn Semiconductors |
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WNB111S5APTS Datasheet(HTML) 4 Page - WeEn Semiconductors |
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4 / 7 page ![]() WeEn Semiconductors WNB111S5APTS Ultrafast power diode - Bare die WNB111S5APTS Product data sheet All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 October 2018 4 / 7 MECHANICAL PARAMETER Chip size 2.84 x 2.84 mm2 Anode pad size 2.28 x 2.28 mm2 Area total /active 8.07 / 5.20 mm2 Thickness 300 μm Wafer size 125 mm Max possible chips per wafer 1371 pcs Passivation Glass Front metal Al Back metal Ti Ni Ag CHIP LAYOUT < > < > Die size: 2840m x 2840m Bond pad size: 2280m x 2280 m 2840 2280 |
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