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FDR411 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FDR411 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 4 page  SOT –23 2013. 06. 07 1/4 SEMICONDUCTOR TECHNICAL DATA FDR411 Revision No : 0 1 3 2 Schottky barrier diode Applications Low current rectification Features 1) Small mold type. (SOT-23) 2) Low IR 3) High reliability. Construction Silicon epitaxial planar We declare that the material of product compliance with RoHS requirements. Sym bol Min. Typ. Max. Unit Conditions VF1 - - 0.50 V IF=500m A VF2 - - 0.30 V IF=10m A Revers e current IR1 - - 30 µA VR=10V Capacitance between term inal Ct1 - 20 - pF VR=10V , f=1MHz Param eter Forwarad voltage Absolute maximum ratings (Ta = 25 °C) Sym bol Unit VRM V VR V Io m A IFSM A Tj ℃ Ts tg ℃ Lim its 20 500 Param eter Electrical characteristics (Ta = 25 °C) Revers e voltage (DC) verage rectified forward current （*1） evers e voltage (repetitive peak) 40 orward current s urge peak （60Hz・1cyc）（*1） 3 unction tem perature torage tem perature *1) Rating of per diode 125 -40 to +125 R A F J S ( Device Marking Shipping 3000/Tape&Reel FDR411 Device marking and ordering information D3E |
Similar Part No. - FDR411 |
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Similar Description - FDR411 |
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