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FDR425 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FDR425 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 3 page  3 CATHODE ANODE 1 2 ANODE SOT –23 2011. 12. 06 1/3 SEMICONDUCTOR TECHNICAL DATA FDR425 Revision No : 0 1 3 2 Schottky barrier diode Applications Low power rectification Features 1) Small surface mounting type. 2) Low VF. (VF=0.45V Typ. at 100mA) 3) High reliability. Construction Silicon epitaxial planar Absolute maximum ratings (Ta = 25 °C) Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A Peak forward surge curren� IFSM 1 A Junction temperature 125 °C Storage temperature °C � 60Hz for 1 Tj Tstg −40~ +150 We declare that material of product compliance with ROHS requirements. 4) DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 3000/Tape&Reel FDR425 D3L Electrical characteristics (Ta = 25 °C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF1 − − 0.55 V IF =100mA Forward voltage VF2 − − 0.34 V IF =10mA Reverse current IR − − 30 µA VR =10V Capacitance between terminals − 6.0 − pF VR =10V, f=1MHz Note) ESD sensitive product handling required. CT |
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