FDR501UT3G datasheet(1/3 Pages) FS

Part #	FDR501UT3G

Description	Surface Mount Schotty Diode

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 3 page

Absolute maximum ratings (Ta = 25

°C)

Parameter

Symbol

Limits

Unit

Peak reverse voltage

VRM

V

DC reverse voltage

VR

V

Mean rectifying current

IO

0.1

A

Peak forward surge current�

IFSM

1

A

Junction temperature

125

C

Storage temperature

C

45

40

−40~

+125

Tj

Tstg

�60 Hz for 1

Electrical characteristics (Ta = 25

°C)

Note) ESD sensitive product handling required.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Forward voltage

VF1

−

0.55

V

IF

=100mA

Forward voltage

VF2

−

0.34

V

IF

=10mA

Reverse current

IR

−

30

µA

VR

=10V

Capacitance between terminals

−

6.0

−

pF

VR

=10V, f=1MHz

CT

−

Surface Mount Schotty Diode

2

ANODE

1

CATHODE

Features

Applications

s

e

r

u

t

a

e

F

s

e

r

u

t

a

e

F

Construction

Device marking and ordering information

Device

Marking

Shipping

FDR501UT1G

4

3000/Tape&Reel

FDR501UT3G

4

10000/Tape&Reel

Low current rectification

1) Small surface mounting type.

2) High reliability.

Silicon epitaxial planar

SEMICONDUCTOR

TECHNICAL DATA

FDR501U

SC-76 / SOD-323

2

1

2009. 7. 28

1/3

Revision No : 1

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FDR501UT3G Datasheet(PDF) 1 Page - First Silicon Co., Ltd

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