AS6C1616 datasheet(2/11 Pages) ALSC

2 / 11 page

AS6C1616-55TINL

Rev. 1.0

16M Bits LOW POWER CMOS SRAM

Alliance Memory, Inc.

FEATURES

 Fast access time : 55ns

 Low power consumption:

Operating current : 45mA (TYP.)

Standby current : 4

A (TYP.) SL-version

 Single 2.7V ~ 3.6V power supply

 All inputs and outputs TTL compatible

 Fully static operation

 Tri-state output

 Data byte control :

LB# controlled DQ0 ~ DQ7

UB# controlled DQ8 ~ DQ15

 Data retention voltage : 1.2V (MIN.)

 Green package available

 Package : 48-pin 12mm x 20mm TSOP-I

GENERAL DESCRIPTION

The AS6C1616 is a 16,777,216-bit low power

CMOS static random access memory organized as

1,048,576 words by 16 bits. It is fabricated using

very high performance, high reliability CMOS

technology. Its standby current is stable within the

range of operating temperature.

The AS6C1616 is well designed for low power

application, and particularly well suited for battery

back-up nonvolatile memory application.

The AS6C1616 operates from a single power

supply of 2.7V ~ 3.6V and all inputs and outputs are

fully TTL compatible

PRODUCT FAMILY

Product

Family

Operating

Temperatur

Vcc Range

Speed

Power Dissipation

Standby(ISB1,TYP.)

Operating(Icc,TYP.)

AS6C1616(I)

-40 ~ 85℃

2.7 ~ 3.6V

55ns

4µA(SL)

45mA

FUNCTIONAL BLOCK DIAGRAM

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 - A19

Address Inputs(word mode)

A-1 - A19

Address Inputs(byte mode)

DQ0

– DQ15 Data Inputs/Outputs

CE#, CE2

Chip Enable Input

WE#

Write Enable Input

OE#

Output Enable Input

LB#

Lower Byte Control

UB#

Upper Byte Control

VCC

Power Supply

VSS

Ground

AS6C1616 Datasheet(PDF) 2 Page - Alliance Semiconductor Corporation

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