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FDS99U Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FDS99U
Description  Dual Serise Switching Diodes
PDF  4 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FDS99U Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FDS99U Datasheet HTML 1Page - First Silicon Co., Ltd FDS99U Datasheet HTML 2Page - First Silicon Co., Ltd FDS99U Datasheet HTML 3Page - First Silicon Co., Ltd FDS99U Datasheet HTML 4Page - First Silicon Co., Ltd  
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THERMAL CHARACTERISTICS
ti
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200
mW
FR–5 Board, (Note 1.) TA= 25°C
C
°
/
W
m
6
.
1
C
°
5
2
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m
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T
θJA
625
°C/W
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300
mW
Alumina Substrate, (Note 2.) TA= 25°C
C
°
/
W
m
4
.
2
C
°
5
2
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a
m
r
e
h
T
θJA
417
°C/W
T
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S
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J
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,Tstg
–65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
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C
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µA)
V(BR)
70
––
Vdc
Reverse Voltage Leakage Current
(VR
I
)
c
d
V
0
7
=
R
––
2.5
µAdc
(VR = 25 Vdc, TJ
0
3
–
–
)
C
°
0
5
1
=
(VR = 70 Vdc, TJ
0
5
–
–
)
C
°
0
5
1
=
C
e
c
n
a
ti
c
a
p
a
C
e
d
o
i
D
D
––
1.5
pF
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
VF
––
715
mVdc
(IF
5
5
8
–
–
)
c
d
A
m
0
1
=
(IF
0
0
0
1
–
–
)
c
d
A
m
0
5
=
(IF
0
5
2
1
–
–
)
c
d
A
m
0
5
1
=
Reverse Recovery Time
RL = 100 Ω
trr
––
6.0
ns
(IF=IR=10 mAdc, iR(REC)=1.0mAdc) (Figure 1)
Forward Recovery Voltage (IF = 10 mA, t r
V
)
s
n
0
2
=
FR
––
1.75
V
1. FR–5 = 1.0
× 0.75 × 0.062 in.
2. Alumina = 0.4
× 0.3 × 0.024 in. 99.5% alumina.
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F ) of 10mA.
2. Input pulse is adjusted so I
R(peak) is equal to 10mA.
3. t
p » t rr
Figure 1. Recovery Time Equivalent Test Circuit
+10 V
2.0 k
820 Ω
100 µH
0.1µF
D.U.T.
0.1 µF
50 Ω OUTPUT
PULSE
GENERATOR
t
r
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC) = 1.0 mA
OUTPUT PULSE
(I
F = I R = 10 mA; MEASURED
at i
R(REC) = 1.0 mA)
INPUT SIGNAL
I
F
V
R
2008. 11. 3
2/4
Revision No : 0
FDS99U / RU



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