SOD-923

2

2

ANODE

1

CATHODE

1

2012. 1. 28

1/3

SEMICONDUCTOR

TECHNICAL DATA

FDS160F

Revision No : 0

Switching diode

• Applications

High speed switching

• Features

1) Extremely small surface mounting type.

2) High Speed.

3) High reliability.

• Construction

Silicon epitaxial planar

compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

•

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

Limits

Unit

Peak reverse voltage

90

V

DC reverse voltage

80

V

Peak forward current

225

mA

Mean rectifying current

100

mA

Surge current (1s)

500

mA

Junction temperature

Tj

125

°C

Storage temperature

– 55 ~ +125

°C

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Forward voltage

–

–

1.2

V

Reverse current

–

–

0.1

µA

Capacitance between terminals

–

0.72

3.0

pF

Reverse recovery time

–

–

4

n s

Device

Marking

Shipping

8000/Tape&Reel

FDS160F

3

ORDRING INFORMATION