EPC2019 datasheet(2/6 Pages) EPC

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eGaN® FET DATASHEET

EPC2019

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Figure 1: Typical Output Characteristics at 25°C

VDS – Drain-to-Source Voltage (V)

VGS = 5 V

VGS = 4 V

VGS = 3 V

VGS = 2 V

120

100

Figure 3: RDS(on) vs. VGS for Various Drain Currents

ID = 4 A

ID = 8 A

ID = 12 A

ID = 24 A

VGS – Gate-to-Source Voltage (V)

2.0

2.5

3.0

3.5

4.0

4.5

5.0

VGS– Gate-to-Source Voltage (V)

Figure 2: Transfer Characteristics

25˚C

125˚C

VDS = 6 V

1.0

0.5

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

120

100

Figure 4: RDS(on) vs. VGS for Various Temperatures

VGS – Gate-to-Source Voltage (V)

2.0

2.5

3.0

3.5

4.0

4.5

5.0

25˚C

125˚C

ID = 7 A

Dynamic Characteristics (TJ = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

CISS

Input Capacitance

VGS = 100 V, VDS = 0 V

200

270

COSS

Output Capacitance

110

150

CRSS

Reverse Transfer Capacitance

0.7

Gate Resistance

0.4

Total Gate Charge

VDS = 100 V, VGS = 5 V, ID = 7 A

1.8

2.5

QGS

Gate-to-Source Charge

VDS = 100 V, ID = 7 A

0.6

QGD

Gate-to-Drain Charge

0.35

0.6

QG(TH)

Gate Charge at Threshold

0.4

QOSS

Output Charge

VDS = 100 V, VDS = 0 V

QRR

Source-Drain Recovery Charge

All measurements were done with substrate connected to source.

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