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FDS160VT1G Datasheet(PDF) 1 Page - First Silicon Co., Ltd

Part # FDS160VT1G
Description  Switching diode
PDF  3 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FDS160VT1G Datasheet(HTML) 1 Page - First Silicon Co., Ltd

  FDS160VT1G Datasheet HTML 1Page - First Silicon Co., Ltd FDS160VT1G Datasheet HTML 2Page - First Silicon Co., Ltd FDS160VT1G Datasheet HTML 3Page - First Silicon Co., Ltd  
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background image
SOD-723
VSC
2
2
ANODE
1
CATHODE
ABSOLUTE MAXIMUM RATINGS (Ta = 25 C)
Peak reverse voltage
90
DC reverse voltage
80
Peak forward current
225
Mean rectifying current
100
Surge current (1s)
500
Junction temperature
Storage temperature
– 55 ~ +125
Switching diode
• Applications
High speed switching
• Features
1) Extremely small surface mounting type.
2) High Speed. (trr = 1.2ns Typ.)
3) High reliability.
• Construction
Silicon epitaxial planar
1
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
Forward voltage
Reverse current
IR
–
0.1
µA
Capacitance between terminals
CT
0.72
3.0
pF
VR=0.5V , f=1MHz
Reverse recovery time
VR=6V , IF=10mA , RL=100
Ω
Device Marking and Ordering Information
•
Device
Marking
Shipping
3000/Tape&Reel
FDS160VT1G
3
Symbol
Parameter
2008. 1. 28
1/3
SEMICONDUCTOR
TECHNICAL DATA
FDS160V
Revision No : 0
Limit
Unit
VRM
VR
IFM
IO
Isurge
TJ
Tstg
mA
mA
C
C
125
mA
V
V
Symbol
Parameter
Min.
Unit
Typ.
Max.
Conditions
VF
trr
–
–
–
–
–
–
1.2
4
V
ns
IF=100mA
VR=80V


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