1

2

3

4

5

6

SOT-363

Dual General Purpose PNP Transistor

2015. 03. 10

1/6

SEMICONDUCTOR

TECHNICAL DATA

FFB3906D

Revision No : 0

The FFB3906D device is spin–off of our popular

SOT–23/SOT–323 three–leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT–363

six–leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low–power surface mount

applications where board space is at a premium.

Featrues

compliance with RoHS requirements.

We declare that the material of product

(1)

(2)

(3)

(4)

(5)

(6)

Device

Marking

Shipping

ORDERING INFORMATION

FFB3906D

A2

3000 Units/Reel

Symbol

Value

Unit

Collector–Emitter Voltage

–40

Vdc

Collector–Base Voltage

–40

Vdc

Emitter–Base Voltage

–5.0

Vdc

Collector Current – Continuous

–200

mAdc

Electrostatic Discharge

ESD

HBM>16000,

MM>2000

V

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Package Dissipation (1)

TA = 25℃

150

mW

Thermal Resistance Junction to

Ambient

833

°C/W

Junction and Storage

Temperature Range

–55 to +150

°C

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended footprint.

Rating

MAXIMUM RATINGS