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ISCNH145M Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNH145M Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCNH145M DESCRIPTION · Static drain-source on-resistance: RDS(on)≤65mΩ · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for applications such as switching power Supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 48 A IDM Pulsed Drain Current 144 A Ptot Total Dissipation@TC=25℃ 300 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.42 ℃ /W |
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