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ISCNH157B Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNH157B Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCNH157B · DESCRIPTION · Drain Current ID= 220A@ TC=25℃ · Drain Source Voltage : VDSS= 40V(Min) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS . · Designed for high current, high speed switching, switch mode power supplies (SMPS), consumer and industrial lighting, DC-AC inverters for welding equipment and uninterruptible power supply(UPS) ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 40 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 220 A ID(puls) Pulse Drain Current 680 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.6 ℃ /W |
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